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YB6010010487 1550nm 18Ghz DFB Laser Diode Butterfly Module Specification
Category: ROF
Product Details
PN: YB6010010487
1550nm 18Ghz DFB Laser Diode Butterfly Module Specification
Features:
- Directly Modulated 1550nm DFB Lasers
- High-frequency response up to 18GHz
- RF SMA or K-Connector
- Wide operation temperature optional
Applications:
- RF over fiber
- Analog RF links transmission
- Test and measurement
- RF Delay line
Description:
The 1550nm 18Ghz laser module is series module the WDM transmission of broadband analog signals frequency is a directly modulated MQW DFB laser, which up to 18GHz. The lasers built in optical isolator, TEC, thermistor, laser chip, and monitor photodiode are hermetically in a 7PIN butterfly package.
Absolute Maximum Ratings
Table 1 - Absolute Maximum Ratings
| Parameter | Symbol | Min. | Max |
| Storage Temperature | ℃ | -40 | 85 |
| Operation Case Temperature | ℃ | -20 | 65 |
| Laser reverse voltage(T=25℃) | V | - | 2 |
| Photodiode reverse voltage | V | - | 20 |
| See Opt J | ℃ | -55 | 85 |
| TEC current | A | 1.7 | |
| RF Input Max. power | DBm | 20 |
| Optical & Electrical Characteristics | ||||||
| Parameter | Symbol | Min. | Typ | Max | Unit | Note |
| Threshold Current | Ith | - | - | 25 | mA | T=25℃ |
| Operation Current | Iop | - | - | 100 | mA | T=25℃ |
| Output Optical Power | Po | - | 10 | - | mW | T=25℃，IF=Iop |
| Input impedance | Zin | - | 50 | - | Ω | T=25℃ |
| Wavelength Temperature Coefficient | - | 0.1 | - | nm/℃ | ||
| Wavelength Current Coefficient | - | 0.003 | - | nm/mA | ||
| Center Wavelength | λ0 | 1547 | 1550 | 1553 | nm | T=25℃，IF=Iop |
| Side Mode Suppression Ratio | SMSR | 35 | - | - | dB | T=25℃, IF=Iop |
| Relative intensity Noise | RIN | - | -150 | - | DB/ Hz | 100MHz-3GHz |
| Thermistor Resistance | Rt | 9.9 | 10 | 10.1 | KΩ | |
| 3dB RF Bandwidth | - | - | 18 | - | Ghz | |
| Optical Isolation | ISO | 30 | - | - | dB | |
| Monitor PD Current | Im | 50 | 2500 | μA | IF = IOP , VMPD = -5 V | |
Mechanical Design Diagram and Pin DefinitionsThe mechanical design diagram is shown in Figure 1. (Dimension in mm)
Connections
Precautions
Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.
a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.
b. Humidity in working environment should be controlled equal or above 40 percent RH.
c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.
d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.
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YB6010010487 1550nm 18Ghz DFB Laser Diode Butterfly Module Specification
Features:Directly Modulated 1550nm DFB Lasers
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