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YB010010002 1064nm DFB Laser Diode Butterfly Module Specification
Category: 1064nm Seed Source
Product Details
PN: YB010010002
1064nm DFB Laser Diode Butterfly Module Specification
Features
Wavelengths：1064nm
High reliability
Applications:
Metrology 
Seedlaser 
Spectroscopy
Description
The 1064nm DFB Laser Diode Butterfly Module, with built-in TEC, thermistor, and MPD integrated in the 14PIN butterfly packaging. The hermetic design meets the requirements of telecommunication , with a narrow linewidth and high power,and at the same time support customer-specified pin definition customization.
Absolute Maximum Ratings
Table 1 - Absolute Maximum Ratings
| Parameter | Symbol | Min. | Max |
| Storage Temperature | ℃ | - | 85 |
| Operation Temperature | ℃ | - | 60 |
| Optical output power (T=25℃) | mw | - | 250 |
| Laser reverse voltage(T=25℃) | V | - | 2 |
| Laser forward current(T=25℃) | mA | - | 500 |
| Optical & Electrical Characteristics | |||||||||||
| Parameter | Symbol | Min. | Typ | Max | Unit | Note | |||||
| Threshold Current | Ith | 20 | 25 | 30 | mA | T=25℃ | |||||
| Output Optical Power | Po | 20 | 36 | - | mW | Iop=100mA,T=25℃ | |||||
| Slope Efficiency(Front facet) | η | 0.5 | 0.9 | - | W/A | T=25℃ | |||||
| Forward voltage | Vf | 1.5 | 1.7 | 2 | V | Iop=50mA,T=25℃ | |||||
| Wavelength Temperature Coefficient | - | 0.08 | - | nm/℃ | Iop=100mA,T=15~30℃ | ||||||
| Wavelength Current Coefficient | - | 0.005 | - | nm/mA | Iop=100~300mA,T=25℃ | ||||||
| Peak Wavelength | λp | 1062 | 1064 | 1066 | nm | Iop=100mA，T=25℃ | |||||
| Side Mode Suppression Ratio | SMSR | 35 | - | - | dB | Iop=100mA,T=25℃ | |||||
| TEC Voltage | - | 4 | - | V | |||||||
| TEC Current | - | 2.5 | - | mA | |||||||
| Resistance value | - | 10 | - | KΩ | T=25℃ | ||||||
| Fiber Characteristics | |||||||||||
| Parameter | Min. | Typ | Max | Unit | Note | ||||||
| Fiber type: SM CORNING HI1060 | |||||||||||
| Fiber length (module case to fiber end) | 1 | m | |||||||||
| Connector | FC/APC | ||||||||||
| Jacket | ∅900 | um | |||||||||
Precautions
Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.
a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.
b. Humidity in working environment should be controlled equal or above 40 percent RH.
c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.
d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.
Mechanical Design Diagram and Pin Definition. The mechanical design diagram is shown in Figure 1. (Dimension in mm)
PIN Definition
| PIN | Description | PIN | Description |
| 1 | TEC+ | 8 | NC |
| 2 | Thermistor | 9 | NC |
| 3 | Monitor anode(+) | 10 | Laser anode（+） |
| 4 | Monitor anode(-) | 11 | Laser anode（-） |
| 5 | Thermistor | 12 | NC |
| 6 | NC | 13 | Package ground |
| 7 | NC | 14 | TEC(-) |
Keywords:YB010010002 1064nm DFB Laser Diode Butterfly Module Specification
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YB010010002 1064nm DFB Laser Diode Butterfly Module Specification
Features:Wavelengths ：1064nm
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