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Y5010020016 1640nm DFB Laser Diode Butterfly Module Specification
Category: DFB
Product Details
PN: Y5010020016
1640 nm DFB Laser Diode Butterfly Module Specification
Features
- Multi-quantum well(MQW) of Edge-Emitting DFB for 1640nm wavelength
- High output power ＞10mW
- Excellent SMSR Performance＞42dB
- High reliability design.
- RoHS Compliant.
- 14pin butterfly package （with TEC/NTC and FC/APC connector of single mode fiber ）
Applications:
Ø INSTRUMENTATION
Description:
The 1640nm laser module is Multi-quantum well（MQW）DFB laser chip in 14-pin butterfly package with thermoelectirc cooler(TEC), thermistor(NTC) , monitor photodiode(MPD), optical isolator,lens inside。With compact structure and small volume，the products are available in high precision NTC and TEC。 The advantages of high stability in power and 1640nm wavelength of lasers make them widely used in INSTRUMENTATION.
Absolute Maximum Ratings
Table 1 - Absolute Maximum Ratings
| Parameter | Symbol | Min | Max. | Unit |
| Operating Case Temperature | Tc | -10 | 70 | ℃ |
| Storage Temperature | Tstg | -40 | 85 | ℃ |
| Relative Humidity | RH | - | 85 | % |
| Forward current（T=25℃） | Iop | - | 100 | mA |
| Reverse voltage(T=25℃） | Vr | - | 2 | V |
| TEC Current | ITEC | - | 1.2 | A |
| TEC Voltage | VTEC | - | 4 | V |
Optical Characteristics (T=25℃）
| Parameter | Symbol | Test Condition | Min | Typ. | Max. | Unit |
| Forward Voltage | Vf | CW | - | - | 2 | V |
| Center Wavelength | λ | CW | 1638 | 1640 | 1642 | nm |
| Threshold Current | Ith | CW | - | - | 35 | mA |
| Optical Output Power | Po | CW | 10 | - | - | mW |
| Side-mode Suppression Ratio | SMSR | CW | 42 | - | - | dB |
| Thermistor Resistance | Rt | @25℃ | 9.5 | 10 | 10.5 | KΩ |
| Thermistor Sensitivity Index | B | B25/50 | 3890 | 3930 | 3970 | K |
| Fiber Bend Radius | - | - | - | 0.9 | - | mm |
| Fiber length | - | 900 | 1000 | 1100 | mm | |
| Connector | - | FC/APC | ||||
Mechanical Design Diagram and Pin Definitions.The mechanical design and Connections diagram is shown in Figure 1. (Dimension in mm)
Precautions
Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.
a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.
b. Humidity in working environment should be controlled equal or above 40 percent RH.
c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.
d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.
Keywords:Y5010020016 1640nm DFB Laser Diode Butterfly Module Specification
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Y5010020016 1640nm DFB Laser Diode Butterfly Module Specification
Features:Multi-quantum well(MQW) of Edge-Emitting DFB for 1640nm wavelength
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