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Y5010020010 1310nm DFB Laser Diode Butterfly Module Specification
Category: DFB
Product Details
PN: Y5010020010
1310nm DFB Laser Diode Butterfly(14PIN) Module Specification
Features
- High output power > 50mW ex-fiber
- The CWDM High-power laser is a ridge structure design with multi-quantum well (MQW) active layer and a distributed feedback grating
- Integrated free-space optical isolator
- Mode-hop free continuous tuning
- Proprietary mirror coating technology enabling high reliability
- Built-in monitor photodiode
- 900um loose tube on fiber
Applications Areas:
- Fiber optic communication systems
- Sensing and Measurement
- Medical and Biotechnology
- Consumer Electronics and Emerging Areas
Absolute Maximum Ratings
Table 1 - Absolute Maximum Ratings
| Parameter | Symbol | Min | Max. | Unit |
| Storage Temperature | Ts | -40 | 85 | ℃ |
| Operation Temperature | Top | - | 70 | ℃ |
| Relative Humidity | RH | 5 | 85 | % |
| Forward current | IF | - | 600 | mA |
| Forward voltage | VF | - | 1.6 | V |
| Reverse voltage | - | - | 2 | V |
| TEC Current | ITEC | - | 1.2 | A |
| TEC Voltage | VTEC | - | 4 | V |
| Parameter | Symbol | Test Condition | Min | Typ. | Max. | Unit |
| Threshold Current | Ith | CW | - | - | 50 | mA |
| Operating Voltage | Vop | CW, IFLD=250mA | - | - | 3 | V |
| Peak Wavelength | λ | CW, IFLD=250mA | 1307 | 1310 | 1313 | nm |
| Optical Output Power | Po | CW, IFLD=250mA | 50 | - | - | mW |
| Side-mode Suppression Ratio | SMSR | CW, IFLD=250mA | 40 | 50 | - | dB |
| Spectral Width (@-20dB) | Δλ | CW, IFLD=250mA | - | 0.3 | - | nm |
| Slope Efficiency | SE | 0.15 | 0.2 | 0.3 | w/A | |
| Monitor Operating Current | Im | CW, IFLD=250mA VRMPD=5V | 100 | - | 2000 | uA |
| Thermistor Resistance | Rt | @25℃ | 9.5 | 10 | 10.5 | KΩ |
| Thermistor Sensitivity Index | B | B25/50 | 3890 | 3930 | 3970 | K |
| isolation | ISO | 30 | - | - | dB | |
| Polarization Extinction Ratio | PER | CW, IFLD=250mA | 18 | - | - | KHz |
Optical Characteristics (T=25℃）
Mechanical Design Diagram and Pin Definitions.The mechanical design and Connections diagram is shown in Figure 1. (Dimension in mm)
Precautions
Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.
a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.
b. Humidity in working environment should be controlled equal or above 40 percent RH.
c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.
d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.
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Y5010020010 1310nm DFB Laser Diode Butterfly Module Specification
Features:High output power > 50mW ex-fiber
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