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25G 1294 nm EML 1309nm APD BIDI LC BOSA SPECIFICATION
Category: 50G PAM4 BIDI OSA
Product Details
PN: Y6250080004
25G 1294 nm EML /1309 nm APD BIDI LC BOSA SPECIFICATION
Features
- LC Receptacle bi-directional operation
- Integrated WDM filter
- Un-cooled operation from -40℃ to 85℃
- Data rate for 25Gbps NRZ
- With optical isolator
- Comply with Telcordia GR-468 and ROHS
Description
This LC receptacle bi-directional optical module uses multi-quantum-well structured EML laser diode and APD-TIA receiver integrated WDM filter inside for 25Gbps industrial temperature application.
Absolute Maximum Ratings
Table 1 - Absolute Maximum Ratings
| Parameter | Symbol | Min. | Max |
| Storage Temperature | ℃ | -40 | 85 |
| Operating Temperature | ℃ | -40 | 85 |
| Reverse Voltage (Laser Diode) | V | - | 3 |
| Laser forward current(T=25℃) | mA | - | 150 |
| Lead Soldering Temperature (10 sec) | ℃ | - | 260 |
| Transmitter | ||||||
| Parameter | Symbol | Min. | Typ | Max | Unit | Note |
| Threshold Current | Ith | - | 20 | 35 | mA | CW，Tec=50℃ |
| Output Optical Power | Po | 4.5 | - | 7 | mW | Iop=90mA,EA=0V,Tec=50℃ |
| Monitor Current(PD) | Im | 0.1 | - | 1.2 | mA | Iop=90mA,EA=0V,Tec=50℃ |
| Dark Current | Id | - | - | 100 | nA | V=-1V |
| Tacking Error | TE | -1.5 | - | 1.5 | dB | Tc=-40~85℃ |
| Peak Wavelength | λp | 1292 | 1294 | 1296 | nm | Iop=90mA,EA=0V,Tec=50℃ |
| Side Mode Suppression Ratio | SMSR | 35 | - | - | dB | Iop=90mA,EA=0V,Tec=50℃ |
| spectral width | △λ | - | - | 1 | nm | Iop=90mA,EA=0V,Tec=50℃ |
| Receiver | ||||||
| Parameter | Symbol | Min. | Typ | Max | Unit | Note |
| Supply Voltage | Vcc | 2.9 | 3.3 | 3.5 | V | Tc=25℃ |
| Supply Current | Icc | - | 37 | 50 | mA | Tc=25℃,Vcc=3.3V |
| Breakdown Voltage | Vbr | 16 | 26 | V | Id=100uA | |
| Dark Current | Id | 3 | uA | Vbr-1V,Tc=25℃ | ||
| Responsibility | Res | 4.0 | - | - | A/W | Vbr-1,Pin=-20dBm@1309nm |
| Sensitivity | Sen | - | - | -26 | dBm | PRBS31 ,BER=5E-5,ER=5dB, 25Gpbs,λ=1309nm,Vbr-1 |
| Return Loss | RL | 12 | - | - | dB | λ=1310nm |
Mechanical Design Diagram and Pin Definitions
The mechanical design diagram is shown in Figure 1. (Dimension in mm)
Precautions
Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.
a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.
b. Humidity in working environment should be controlled equal or above 40 percent RH.
c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.
d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.
Keywords:25G 1294 nm EML 1309nm APD BIDI LC BOSA SPECIFICATION
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25G 1294 nm EML 1309nm APD BIDI LC BOSA SPECIFICATION
Features:LC Receptacle bi-directional operation
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