Y6030060002 25G PON OLT OSA SPECIFICATION
Category: 25G PON OLT
Product Details
PN: Y6030060002
25G PON OLT (EML 1358 /25G 1286 APD)BOSA
Description
This single-fiber optical sub-assembly is designed for High-speed transmission applications.It is in-tegrated with 25Gb/s 1358nm EML and 25Gb/s 1286nm Receiver with APD and TIA ,and together with optiacl filters for beam direction.
Features
⚫1358 EMA electric absorption modulated laser
⚫ High sensitive APD -TIA
⚫ -5~75℃ Operating temperature range
⚫ SC/UPC connector
⚫ Comply with ROHS requirements
Application:
⚫ Meets 25G-PON MSA
Absolute Maximum Ratings
| Parameter | Symbol | Min. | Max. | Unit | Note |
| Laser Diode Reverse Voltage | VRL | -- | 2 | V | |
| Laser Diode Forward Current | IFL | -- | 100 | mA | |
| SOA Forward Current | Isoa | -- | 80 | mA | |
| SOA Reverse Voltage | Vrs | -- | 2 | V | |
| Modulator Reverse Voltage | Vmr | -- | -3 | V | |
| TEC Voltage | -- | -- | 2.7 | V | |
| TEC Current | -- | -- | 0.9 | A | |
| Operate Temperature | TOP | -5 | 80 | ℃ | |
| Storage Temperature | Tst | -40 | 85 | ℃ |
Optical and Electrical Characteristics( Tc=25℃,unless other specified)
Transmitter Characteristics
| Transmitter | ||||||
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Nominal bit rate | BR | -- | 25 | -- | Gb/s | CW, Iop=90mA,Isoa=80mA Vea=0V, Top=50℃ |
| Threshold Current | Ith | -- | -- | 40 | mA | |
| Optical power | Po | 5 | -- | -- | mW | |
| Forward Voltage | Vf | -- | -- | 2 | V | |
| Center wavelength | λp | 1356 | 1358 | 1360 | nm | |
| Side Mode Suppression Ratio | SMSR | 35 | -- | -- | nm | |
| Spectral width | △λ | -- | -- | 0.4 | nm | |
| Optical Return loss | RL | 15 | -- | -- | dB | |
| Resistance Value At 25℃ | R25 | 9.9k | 10k | 10.1k | Ω | 25℃ |
| Thermoelectric Cooler Power | -- | -- | -- | 1.3 | W | CW, Tc=-5~80°C, Tld=50°C |
| Thermoelectric Cooler Current | -- | -- | -- | 0.9 | A | CW, Tc=-5~80°C, Tld=50°C |
| Thermoelectric Cooler Voltage | -- | -- | -- | 2.5 | V | CW, Tc=-5~80°C, Tld=50°C |
| Tracking Error | TE | -1.5 | -- | 1.5 | dB | Pf =10*log (Pf (Tc) /Pf (25℃)), |
| Receiver | ||||||
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
| Nominal bit rate | BR | -- | 25 | -- | Gb/s | - |
| Receiver wavelength | λp | 1284 | 1286 | 1288 | nm | - |
| Supply Voltage | Vcc | 2.99 | 3.3 | 3.63 | V | Tc=25℃ |
| Supply Current | Icc | 25 | 32 | 40 | mA | Tc=25℃ |
| Breakdown Voltage | Vbr | 20 | 27 | 40 | V | Id=10uA,Pin=0uW,Vcc ON |
| Operating Voltage | Vop | -- | Vbr*0.9 | -- | V | - |
| Dark Current | Id | -- | -- | 100 | nA | Vop,Tc=25℃ |
| Responsivity | Res | 5 | -- | -- | uA/uW | Vop,Pin=-20dBm |
| Sensitivity | Sen | -- | -- | -26 | dBm | 25.78 Gb/s, BER=10-3 , ER=6dB, Vop |
| Optical Isolate | IOS | -- | -- | -35 | dB | @1342~1360nm |
| Optical Crosstalk | CT | -- | -- | -35 | dB | @1358nm |
Mechanical Design Diagram and Pin Definitions(Dimension in mm)

The connector is SC/UPC,the length of fiber is according to customers demand。
Precautions
Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.
a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.
b. Humidity in working environment should be controlled equal or above 40 percent RH.
c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.
d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.
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Y6030060002 25G PON OLT OSA SPECIFICATION
Features :1358 EMA electric absorption modulated laser
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