Welcome to the official website of Friend Laser Photonics Co.,Ltd.!
Y3020040003 10G 1577nm DFB Laser Diode TO56 Specification
Category: 10G DML TO
Product Details
PN: Y3020040003
10G 1577nm DFB Laser Diode TO56 Specification
Features
- 1577nm typical emission wavelength
- Data rate up to 10.3125Gbps
- TO56 package with TEC and 12.1mm aspheric lens
- ROHS Compliant
- Compliant with Telcordia GR-468
Applications:
10G EPON OLT 
XG COMBO OLT
Description:
The Product is a directly modulated 10Gbps 1577nm DFB laser diode devices in hermetic TO-56 package.The product is available with aspheric lens cap、NTC, and co-packaged InGaAs monitoring photodiode.
Absolute Maximum Ratings
Table 1 - Absolute Maximum Ratings
| Parameter | Symbol | Min. | Max |
| Storage Temperature | ℃ | -40 | 85 |
| Operation Temperature(CASE) | ℃ | -10 | 85 |
| Laser reverse voltage(T=25℃) | V | - | 2 |
| Laser forward current(T=25℃) | mA | - | 120 |
| TEC current | A | 0.94 | |
| TEC voltage | V | 2.4 | |
| PD reverse bias voltage(T=25℃) | V | 20 | |
| PD forward current(T=25℃) | mA | 2 |
| Optical & Electrical Characteristics | ||||||
| Parameter | Symbol | Min. | Typ | Max | Unit | Note |
| Threshold Current | Ith | - | 8 | 15 | mA | T=45℃ |
| Output Optical Power | Po | 8 | - | - | mW | T=25℃，If=50mA |
| Forward voltage | Vf | - | 1.1 | 1.6 | V | T=25℃,CW |
| Operating current | Iop | - | - | 80 | nm/℃ | T=25℃,CW |
| Slope efficiency | Se | 0.25 | - | - | mw/mA | T=25℃,CW |
| Center Wavelength | λ | 1575 | 1577 | 1580 | nm | T=25℃,If=50mA |
| Side Mode Suppression Ratio | SMSR | 35 | - | - | dB | T=25℃,CW |
| Spectral width | Δλ | - | 0.1 | - | nm | T=25℃,10Ghz at -20dB |
| Resistance | Rs | - | 8 | 10 | Ω | T=25℃,If=50mA |
| Monitor PD Current | Im | 100 | - | 1000 | μA | T=25℃,If=50mA |
| Monitor Dark Current | Id | - | - | 100 | nA | T=25℃,Vr=-5v |
| Focus length | FL | 11.6 | 12.1 | 12.6 | mm | T=25℃,If=Ith+20mA |
| Resistance value (thermister) | R | - | 10 | - | KΩ | T=25℃ |
The Mechanical Design Diagram and Pin Definitions.The mechanical design diagram is shown in Figure 1. (Dimension in mm)
Precautions
Semiconductor chips are sensitive to electro-static damage. The module shall be packed with antistatic material for transportation. The working station and operators shall be grounded. Switching transients can cause electrical overstress (EOS) damage to the chips. EOS be may resulted from improper ESD handling, improper power sequencing, a faulty power supply or an intermittent connection.
a. Operators should always use antistatic bands and clothing, electric conductive shoes, and other safety appliances while at work are highly recommended.
b. Humidity in working environment should be controlled equal or above 40 percent RH.
c. It is recommended that grounding mats be placed on the surfaces of assembly line workbench and the surrounding floor in working area, etc.
d. When mounting this product in other parts or materials which can be electrically charged (printed wiring boards, plastic products, etc.), pay close attention to the static electricity in those parts.ESD may damage the product.
Keywords:Y3020040003 10G 1577nm DFB Laser Diode TO56 Specification
Previous Product: None
Next Product: None
Y3020040003 10G 1577nm DFB Laser Diode TO56 Specification
Features:1577nm typical emission wavelength
DownloadRelated Products
Product Inquiry
Leave us the information you'd like to inquire about, and we'll get back to you as soon as possible.
Address: Building 1, 3rd Floor, DeweiSi Electronic Industry Park, No. 1 Liufangyuan North Road, Fozuling Subdistrict, Jiangxia District, Wuhan City, Hubei Province
Email: info@friend-laser.com
Friend Laser Photonics Co.,Ltd.
WeChat